FZ硅片（进口）

 

    

 

1. 掺杂类型：N，P 

2. 直径2～8英寸

3. 阻值：几十Ωcm-20kΩcm及以上

4. FZ硅片是指通过区熔法制作的硅片，将硅棒从籽晶一端区域熔化，将熔化区逐渐移动至硅棒另一端，利用杂质的分凝原理和蒸发特性，可以对硅棒进行提纯，并得到很均匀的杂质分布，这种技术通常用于制造高纯度的本征硅片。

1. Doping type: N, P

 

2. 2 －－ 8 inches in diameter

 

3. Resistance: dozens of Ω cm - 20 k Ω cm or more

 

4 FZ silicon refers to the area by melting the rule of law as a silicon, silicon rods from seed crystal end zone melting, melt area gradually moving to the silicon rod at the other end, using segregated principle ａnd evaporation characteristics of impurities, the silicon rod can be purified, ａnd get a very homogeneous distribution of impurities, this technique is usually used in the manufacture of high purity of intrinsic silicon chips.