PE-ALD 等离子体增强原子层沉积

原子层沉积（ALD）是在3D结构上逐层沉积超薄薄膜的工艺方法。薄膜厚度和特性的精确控制通过在工艺循环过程中在真空腔室分步加入置物实现。等离子增强原子层沉积（PEALD）是用等离子化的气态原子替代水作为氧化物来增强ALD性能的方法。

SENTECH基于多年研发制造PECVD和ICPECVD的经验，包括有的PTSA技术，推出台PEALD设备。新的ALD设备应用SENTECH椭偏仪，使热辅助和等离子辅助的操作和沉积过程都能得到监控。
SENTECH使用激光椭偏仪和宽量程分光椭偏仪的沿技术——超快在线椭偏仪来监控逐层膜生长。
台PEALD设备已经在布伦瑞克科技大学（TU Braunschweig）投入使用，用于生长超高均匀性和密度的氧化膜，如Al2O3和ZnO等。
在Al2O3沉积过程中，三甲基铝（TMA）等离子产生的氧原子反应，衬底温度为80到200℃。PEALD薄膜厚度均匀性高、折射率变化小的特点。

PE-ALD plasma enhanced atomic layer deposition

 

 

 

Atomic layer deposition (ALD) is a process of layer by layer deposition of ultra-thin films on 3D structure. Precise control of film thickness ａnd properties is achieved by adding precursors step by step in the vacuum chamber during the process cycle. Plasma enhanced atomic layer deposition (PEALD) is an advanced method to enhance the properties of ALD by replacing water with gaseous atoms, which are isoionized.

 

SENTECH＇s first PEALD device builds on years of experience in developing ａnd manufacturing PECVD ａnd ICPECVD, including proprietary PTSA technology. The new ALD device uses SENTECH ellipsometry to monitor both thermal - ａnd plasma-assisted operation ａnd deposition processes.

SENTECH uses ultra-fast online ellipsometry, the cutting edge of laser ellipsometry ａnd wide range spectroellipsometry, to monitor layer by layer film growth.

The first PEALD facility has been commissioned at TU Braunschweig for the growth of ultra-uniform ａnd dense oxide films such as Al2O3 ａnd ZnO.

During Al2O3 deposition, trimethylaluminum (TMA) plasma generates oxygen atom reactions at substrate temperatures ranging from 80 to 200℃. PEALD film is characterized by high thickness uniformity ａnd small refractive index change.