ParcanNano百纳米单探针电子束光刻机P-SPL21

利用探针在近光刻胶表面发射低能电子的原理实现光刻效果。该系统的主要特点在于：

（1）几乎无邻近效 应，能实现 3-5nm 线宽的超精细光刻结构；

（2）用于发射电子的探针同时具有原子力显微镜功能，能够实现亚纳米精准定位并原位测量曝光图型；

（3）超高写场拼接精度（≤2nm），且能够抑制电子束长时间产生的空间漂移（≤5nm）。百及纳米科技的探针电子束光刻系统能够实现光刻与原子力 显微镜表征的双重功能，是一款理想的用于微纳制造和表征尺寸小于 5nm 线宽结构的一体化系统。

尤其是针对二维材料，探针的电子束场发射可以直接辐照在二维材料（如 MoS2，石墨烯等）表面形成感光反应，去除曝光区的二维材料，直接显影并呈现出预设的超精细结构，达到无需使用电子束光刻胶而直接转移图形的效果。 

技术特点：

A single probe electron beam lithography system P-SPL21

The lithography effect is achieved by the low energy electron emission from the probe near the photoresist surface. The main characteristics of the system are:

(1) With almost no proximity effect, the hyperfine lithography structure with a linewidth of 3-5nm can be realized;

(2) The probe used for emitting electrons also has the function of atomic force microscopy, which can realize accurate positioning ａnd in situ measurement of the exposure pattern at the sub-nanometer level;

(3) Ultra-high write field stitching accuracy (≤2nm), ａnd can suppress the spatial drift generated by the electron beam for a long time (≤5nm). B&n＇s probe electron beam lithography system can realize the dual function of lithography ａnd AFM characterization. It is an ideal integrated system for micro-nano fabrication ａnd characterization of structures with linewidth less than 5nm.

Especially for two-dimensional materials, the electron beam field emission of the probe can directly irradiate the surface of two-dimensional materials (such as MoS2, graphene, etc.) to form a photosensitive reaction, remove the two-dimensional materials in the exposure area, directly develop ａnd present the preset hyperfine structure, so as to achieve the effect of directly transferring the pattern without using electron beam photoresist.

功能指标