原子层沉积系统 ALD
价格：￥电议
品牌名称：$brandModel.Title(进口品牌)型号：ALD-02 原产地：中国大陆 发布时间：2020/12/21 10:48:05更新时间：2024/11/8 15:29:02
产品摘要：ALD-02原子层沉积系统 ALD产品介绍The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-ba
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详细内容
ALD-02原子层沉积系统 ALD
ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock
ALD-02原子层沉积系统 ALD
ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLockvvv ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLockvvv ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLockvvv ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock
ALD-02原子层沉积系统 ALD
ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLockv ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLockvv ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock ALD-02原子层沉积系统 ALD
产品特点
产品参数
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.
产品参数
Operation Vacuum: 1 Torr to UHV
2 Heated Gas Lines (can be expanded to 12)
Gas injection mode: bubbler ａnd direct draw
Sample size: up to 4 in standard, optional 12in
Substrate heater: up to 500°C, optional higher temp
产品介绍
Applications
High k dielectrics
Nanocoatings
Surface modification layers
Device encapsulations
Photonic crystals
Optional add-on components
Remote plasma source
Ozone delivery system
Quartz crystal monitor
Quadruple mass spectrometer
Real-time temperature monitor
Ellipsometer
LoadLock
热门标签：ALD-02原子层沉积系统 ALD
